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Robert Heath Dennard (Terrell, 5 de septiembre de 1932-23 de abril de 2024) [1] fue un ingeniero eléctrico e inventor americano.
Robert Heath Dennard (September 5, 1932 – April 23, 2024) was an American electrical engineer and inventor.
16 de may. de 2024 · Robert H. Dennard, an engineer who invented the silicon memory technology that plays an indispensable role in every smartphone, laptop and tablet computer, died on April 23 in Sleepy Hollow, N.Y.
23 de may. de 2024 · Robert H. Dennard was an American engineer credited with the invention of the one-transistor cell for dynamic random-access memory (DRAM) and with pioneering the set of consistent scaling principles that underlie the improved performance of increasingly miniaturized integrated circuits.
Robert Dennard was a renowned electrical engineer who invented dynamic random-access memory (DRAM), the memory cell behind billions of devices. He also formulated Dennard scaling, a theory that predicted the performance and power efficiency of computer chips.
3 de jun. de 2024 · Robert Dennard spent more than half a century working at one company: IBM. During his tenure at IBM, Dennard worked on a variety of advanced electronics projects; however, he’s best remembered for two major accomplishments: he invented the DRAM and was the first person to observe and formulate the advantageous scaling of speed and ...
21 de may. de 2024 · IBM research engineer Robert H. Dennard went home discouraged one evening in 1966. Another group in the company had made a presentation that showed how a system using ultrathin magnetic film...
